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US Patent Issued to TAIWAN-ASIA SEMICONDUCTOR on Nov. 3 for "High electron mobility transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,342, issued on Nov. 3, was assigned to TAIWAN-ASIA SEMICONDUCTOR Corp. (Hsinchu City, Taiwan). "High electron mobility transistor" was inven... Read More


US Patent Issued to Transphorm Technology on Nov. 3 for "N-polar devices including a depleting layer with improved conductivity" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,343, issued on Nov. 3, was assigned to Transphorm Technology Inc. (Goleta, Calif.). "N-polar devices including a depleting layer with improv... Read More


US Patent Issued to Sumitomo Electric Industries on Nov. 3 for "Amplifier circuit" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,344, issued on Nov. 3, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan). "Amplifier circuit" was invented by Ken Kikuchi (Os... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including a channel layer including a two-dimensional (2D) semiconductor material" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,345, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including a channel layer... Read More


US Patent Issued to SK hynix on Nov. 3 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,346, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same" ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including 3D-stacked field-effect transistors having isolation structure between contact plugs" (New York, Virginia Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,347, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including 3D-stacked fiel... Read More


US Patent Issued to SK hynix, KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION on Nov. 3 for "Semiconductor device including recess gate structure and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,348, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea) and KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (Seoul,... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Manufacturing method of semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,349, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Manufacturing method of semiconductor... Read More


US Patent Issued to Peiching Ling on Nov. 3 for "Semiconductor structures including conducting structure and methods for making the same" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,350, issued on Nov. 3, was assigned to Peiching Ling (San Jose, Calif.). "Semiconductor structures including conducting structure and method... Read More


US Patent Issued to FUJI ELECTRIC on Nov. 3 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,353, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device" was invented by Yasu... Read More